note1: thermal resistance from junction to ambient. page1 parameter symbol max. repetitive peak reverse voltage max. dc blocking voltage max. rms voltage max. average forward current reverse recovery time max. thermal resistance (note1) max. operating junction temperature storage temperature max. dc reverse current at rated dc blocking voltage ta=25 o c ta=100 o c max. instantaneous forward voltage at 1.0a peak surge forward current 8.3ms single half sine-wave superimposed on rate load (jedec method) v rrm v dc v rms i fsm i o v f t rr i r r jl t j t stg 50 1.5 53 -55 to +155 -55 to +150 5.0 50 1.3 250 500 100 v v v a a v ns ua o c/w o c o c www.comchiptech.com cfra 151-g 50 50 35 100 100 70 200 200 140 400 400 280 600 600 420 800 800 560 1000 1000 700 cfra 152-g cfra 153-g cfra 154-g cfra 155-g cfra 156-g cfra 157-g unit case: sma/do-214ac molded plastic terminals: solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any approx. weight: 0.04 gram mechanical data: maximum ratings and electrical characterics: ideal for surface mount applications easy pick and place plastic package has underwriters lab. flammability classification 94v-0. fast recovery time: 150 ~ 500ns low leakage current features: reverse voltage: 50 ~ 1000 volts forward current: 1.0 amp cfra151-g thru cfra157-g (rohs device) smd efficient fast recovery rectifier -g suffix designates rohs compliant version 0.008(0.20) 0.004(0.10) 0.067(1.70) 0.051(1.29) 0.091(2.31) 0.067(1.70) 0.059(1.50) 0.035(0.89) 0.110(2.79) 0.086(2.18) 0.180(4.57) 0.160(4.06) 0.012(0.31) 0.006(0.15) 0.209(5.31) 0.185(4.70) dimensions in inches and (millimeters) do-214ac (sma)
page2 www.comchiptech.com smd efficient fast recovery rectifier -g suffix designates rohs compliant version rating and characteristic curves (cfra151-g thru cfra157-g) 0 0.4 0.8 1.2 1.6 2.0 fig. 6 - current derating curve (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non- inductive notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | | | | | | | | 1cm set time base for 50 / 10ns / cm trr d.u.t. 10 noninductive 50 noninductive 0 10 20 50 40 30 1 5 10 50 1 00 0.1 1.0 10 100 1000 20 0 40 60 140 120 100 80 1 100 10 0.1 0.01 single phase half wave 60hz 0 20 40 60 80 100 1000 100 10 1.0 0.1 tj=25 c pulse width 300us 4% duty cycle tj=25 c average forward current ( a ) ambient temperature ( c) 0 25 50 75 100 125 150 175 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 8.3ms single half sine wave jedec methode tj=125 c tj=25 c tj=25 c f=1.0mhz vsig=50mv p-p fig. 1 - reverse characteristics fig.2 - forward characteristics reverse current ( ua ) forward current ( a ) percent of rated peak reverse voltage (%) forward voltage(v) fig. 4 - non repetitive forward surge current fig. 3 - junction capacitance junction capacitance (pf) peak surge forward current (a) number of cycles at 60hz reverse voltage (v) fig. 5 - test circuit diagram and reverse recovery time characteristics
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